Vacancy Description
Key Responsibilities:
1. Si-based 3D DRAM:
1) Novel Metals & Interconnect Strategy:
- Lead the research and integration of advanced low-resistivity conductive materials for sub-10nm metal line and interconnect applications.
- Focus on materials screening, physical property optimization (e.g. thermal stability and work function engineering), process optimization, and HVM readiness evaluation and preparation.
2) Advanced Junction Formation:
- Define the process for ultra-scaled junction formation.
- Develop low-thermal-budget process and technology to achieve precise doping profiles and activation, ensuring optimal device performance in HAR 3D structures.
- Develop novel characterization technologies for precise junction profile measurements in complex 3D structures.
3) 3D Architecture & Silicide Integration:
- Overcome challenges in high aspect ratio structures.
- Deve...
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