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Principal Medium Voltage Power MOSFET Design Engineer

Renesas

Takasaki, Japan, Japan Full-time June 11, 2026
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Vacancy Description

Principal Medium Voltage Power MOSFET Design Engineer

Job Description

**Job Summary:**
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.

**Key Responsibilities:**

+ Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
+ Develop TCAD simulation decks and propose advanced device design concepts
+ Analyze wafer-level electrical test results and package-level performance data for each development iteration
+ Lead yield improvement activities and support technology tran...

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